6
RF Device Data
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3
TYPICAL CHARACTERISTICS
100
13
16.5
3
8
64
Pout, OUTPUT POWER (WATTS) CW
10
16
15
14
56
48
40
32
η
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
15.5
14.5
13.5
VDD
= 28 Vdc
IDQ
= 450 mA
f = 2140 MHz
ηD
Gps
IM3 (dBc), ACPR (dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
?60
?10
0.01
7th Order
TWO?TONE SPACING (MHz)
VDD
= 28 Vdc, P
out
= 60 W (PEP), I
DQ
= 450 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
3rd Order
?20
?30
?40
?50
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
?60
Pout, OUTPUT POWER (WATTS) AVG. W?CDMA
40
?20
25
?30
20
?35
15
?40
5
?50
0.2 10 301
?45
10
36
52
P3dB = 48.66 dBm (73.43 W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 450 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
50
48
46
44
29 3230
31 3533 34
Actual
Ideal
P1dB = 47.89 dBm (61.52 W)
51
49
45
47
28
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IM3
Gps
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
VDD
= 24 V
09010
20 30
40 50 60 70 80
100
12
17
14
13
15
14.5
16
IDQ
= 450 mA
f = 2140 MHz
30
?55
ηD
ACPR
28
V
32
V
0.1
35
?25
16.5
15.5
13.5
12.5
VDD= 28 Vdc, IDQ
= 450 mA, f1 = 2135 MHz
f2 = 2145 MHz, 2 x W?CDMA, 10 MHz @ 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
16
24